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| 1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES * Diffused Series * Available in Normal & Reverse Polarity * Industrial Grade * Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF VFM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 100A 1.5V 2200A 500 A 24000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS JC Tj Tstg W Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight 0.400C/W -650C to 1500C -65 0C to 2000C 2.0 M-kg min, 3.0 M-kg max 150 gms. ELECTRICAL RATINGS TYPE VRRM Max. repetitive peak reverse voltage (v) VR(RMS) VR Max. R.M.S. reverse voltage(V) Max. D.C. Blocking Voltage (V) 1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296 100 70 100 200 140 200 300 210 300 400 280 400 500 350 500 600 420 600 800 560 800 320 200 1000 1200 700 840 1000 1200 400 200 480 200 IR(AV) Recommended R.M.S. working 40 80 120 160 200 240 Voltage(v) Max. Average reverse leakage 200 200 200 200 200 200 current @ VRRM Tc 250C (uA) NAINA SEMICONDUCTOR LTD., D-95 ,SECTOR -63 NOIDA(INDIA) e-mail:sales@nainasemi.com, web site: www.nainasemi.com |
Price & Availability of 1N3297
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